![]() Original Assignee Infineon Technologies AG Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( en Inventor Frank Pfirsch Carsten Schäffer Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US10/352,825 Other versions US20030160270A1 ![]() Google Patents Power semiconductor component, IGBT and field-effect transistorÄownload PDF Info Publication number US6815769B2 US6815769B2 US10/352,825 US35282503A US6815769B2 US 6815769 B2 US6815769 B2 US 6815769B2 US 35282503 A US35282503 A US 35282503A US 6815769 B2 US6815769 B2 US 6815769B2 Authority US United States Prior art keywords trench component according semiconductor power semiconductor zone Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US6815769B2 - Power semiconductor component, IGBT and field-effect transistor US6815769B2 - Power semiconductor component, IGBT and field-effect transistor
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